Lead the development of deep sub-micron generation production-worthy and cost-effective processes.
- Take ownership of both process development and related tool issues for specific films/processes.
- Integrate new processes into corresponding process flows for application in high-density advanced memory parts, primarily Advanced NAND applications.
- Collaborate with diverse teams across R&D, integration, pilot line, and high-volume production to achieve timely task completion.
- Plan and implement experiments and write concise reports detailing the results.
- Develop innovative chemistries and hardware for process innovation.
- Define process and equipment strategies for next-generation NAND.
- Design and execute experiments to enhance NAND Cell performance.
- Identify and understand failure mechanisms of Cell materials and correlate them with NAND Cell electrical behaviors.
- Deliver innovative solutions for next-generation Advanced NAND Cell technology.
Other Responsibilities
- Suggest process alternatives and evaluate options to improve film properties and process margins.
- Drive collaboration with integration, device, and manufacturing teams to address NAND Cell technology gaps.
- Solve complex problems related to process and material development.
- Lead cost-saving initiatives through efficient process and material utilization.
- Correlate process parameters with device cell metrics to optimize performance.
Required Expertise
- Experience in thin film processing (ALD, CVD) and characterization methods.
- Knowledge of chemical kinetics, thermal dynamics, plasma physics and chemistry, vacuum physics, and their direct application to thin film deposition processes.
- Understanding of electronic material properties resulting from various types of deposited thin films.
- Fundamental characterization of Cell materials and development of new methodologies to project NAND Cell reliability.
- Familiarity with interactions between process/hardware and device performance.
- Knowledge of fundamental challenges in material exploration for device scaling.
- Proficiency in various thin film electrical evaluation methods and techniques such as leakage, impedance, and capacitance.
- Experience and knowledge of Fab metrology tools such as optical/electrical methods.
- Understanding of device physics, including basic MOCAP, MOSFET, and 3D NAND operation.
- Knowledge of 3D NAND structure and interaction between film processes and structural effects.
- Awareness of overall 3D NAND trends and history.
Minimum Qualifications
- PhD or equivalent experience in Materials Science and Engineering, Chemical Engineering, Physics, Chemistry, Electrical Engineering, or a related field.
- At least 3 years of demonstrated experience in thin films research and development, preferably with experience in deposition for microelectronic devices.